Substrate Effects on Growth Dynamics of WTe ₂ Thin films

Synthesis of transition metal dichalcogenides (TMDCs) has been achieved through the direct conversion and metal-oxide films, demonstrating ability to grow large area thin films with uniform thickness on a variety substrates control over growth orientation (horizontal vs vertical) TMDC layers. However, synthesized often exhibit small grains are more defective than their bulk counterparts. This is especially true for 2D telluride due low reactivity between tellurium metals such as W Mo. In this work, substrate interactions examined WTe2 converted from amorphous WOx grown by atomic layer deposition, c-plane sapphire SiO2 tellurization at high temperatures. Similar MoTe2, formation monolayer observed, but not SiO2. decreased diffusion compared Mo, flakes instead continuous providing insight into role specific during synthesis films.